2/5/1 (Item 1 from file: 2)
6760847   INSPEC Abstract Number: A2000-24-7660E-007
Title: Suppression of Dyakonov-Perel spin relaxation in 2D channels of finite width
Author Kiselev, A.A.; Kim, K.W.
Author Affiliation: Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Journal: Physica Status Solidi B Conference Title: Phys. Status Solidi B (Germany)     vol.221, no.1    p. 491-4
Publisher: Wiley-VCH ,
Publication Date: 1 Sept. 2000  Country of Publication: Germany
CODEN: PSSBBD ISSN: 0370-1972
SICI: 0370-1972(20000901)221:1L.491:SDPS;1-9
    Material Identity Number: P107-2000-010
U.S. Copyright Clearance Center Code: 0370-1972/2000/$17.50+0.50
Conference Title: Sixth International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2000)
Conference Date: 10-13 April 2000    Conference Location: Marburg, Germany

Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Theoretical (T)
Abstract: We have investigated spin-dependent transport in semiconductor narrow 2D channels and explored the possibility of suppressing spin relaxation. Our approach is based on a Monte Carlo transport model and incorporates information on conduction band electron spins and spin rotation mechanisms. Specifically, an ensemble of electrons experiencing multiple scattering events is simulated numerically to study the decay of electron spin polarization in channels of finite width due to the Dyakonov-Perel (DP) mechanism. We have identified different regimes of the spin relaxation in the 2D channels of finite width and established the dependencies of spin relaxation time on the width L and DP parameter eta /sub DP/. The most attractive regime for future spintronic applications is the regime of the suppressed spin relaxation with the relaxation time tau /sub S/ scaling as L/sup -2/.  ( 6 Refs)
Descriptors: electron spin; electron spin polarisation; electron spin-lattice relaxation; Monte Carlo methods; semiconductor materials
Identifiers: Dyakonov-Perel spin relaxation; 2D channels; spin relaxation suppression; Monte Carlo transport model; conduction band electron spin; spin rotation mechanism; numerical simulation; electron scattering; electron spin polarization decay; finite width channels; spin relaxation time; spintronics
Class Codes: A7660E (Relaxation effects (condensed matter NMR)); A7115Q (Molecular dynamics calculations and other numerical simulations (condensed matter electronic structure)); A7220D (General theory, carrier scattering mechanisms (semiconductors/insulators))
  Copyright 2000, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/2 (Item 2 from file: 2)
6749804   INSPEC Abstract Number: A2000-24-6146-003, B2000-12-3110M-005
Title: Magnetic nanostructures: from physical principles to spintronics
Author Heinrich, B.
Author Affiliation: Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Journal: Canadian Journal of Physics     vol.78, no.3    p. 161-99
Publisher: Natl. Res. Council Canada ,
Publication Date: March 2000  Country of Publication: Canada
CODEN: CJPHAD ISSN: 0008-4204
SICI: 0008-4204(200003)78:3L.161:MNFP;1-T
    Material Identity Number: C005-2000-008
U.S. Copyright Clearance Center Code: 0008-4204/2000/$7.00

Language: English    Document Type: Journal Paper (JP)
Treatment: Theoretical (T)
Abstract: A brief summary of underlying principles governing ultrathin film magnetic nanostructures and magnetoelectronics will be presented. The presentation will be based more on physical intuition than on rather complex physical and mathematical models in order to bring this new and rapidly expanding field to a broad audience. The success of this field has been based on the ability to create new structures in which interfaces play a crucial role. Three major phenomena have strongly affected progress in the development of new magnetic materials based on ultrathin films: (a) interface anisotropies; (b) interlayer exchange coupling; and (c) magneto-electron transport. The great progress in the study of ultrathin film multilayers and films patterned with submicrometre lateral geometries has led to a new class of electronic devices whose operation is based upon the spin-polarized character of the electronic carriers. "Magnetoelectronics and spintronics" are terms used to mark the development of very small spin-polarized electronic devices. Some latest developments in magnetic sensors and magnetic RAM will be presented to emphasize the importance of spintronics in the emerging technologies of the 21st century.  ( 89 Refs)
Descriptors: electron spin polarisation; magnetic materials; magnetic multilayers; magnetic sensors; magnetic thin films; magnetoresistive devices; nanostructured materials
Identifiers: magnetic nanostructures; physical principles; spintronics; ultrathin film magnetic nanostructures; physical models; mathematical models; interface anisotropies; interlayer exchange coupling; magneto-electron transport; ultrathin film multilayers; submicrometre lateral geometries; electronic devices ; spin-polarized character; electronic carriers; magnetoelectronics; spin-polarized electronic devices; magnetic sensors; magnetic RAM
Class Codes: A6146 (Structure of solid clusters, nanoparticles, and nanostructured materials ); A7125W (Electronic structure of solid clusters and nanoparticles); A7550K ( Amorphous and nanostructured magnetic materials); A7550R (Magnetism in interface structures); A7570C (Interfacial magnetic properties); A0755 (Magnetic instruments and techniques); A7570 (Magnetic films and multilayers); A7525 ( Spin arrangements in magnetically ordered materials); B3110M (Magnetic multilayers)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/3 (Item 3 from file: 2)
6701831   INSPEC Abstract Number: A2000-20-7320D-033
Title: Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers
Author Grundler, D.
Author Affiliation: Inst. fur Angewandte Phys., Hamburg Univ., Germany
Journal: Physical Review Letters     vol.84, no.26    p. 6074-7
Publisher: APS ,
Publication Date: 26 June 2000  Country of Publication: USA
CODEN: PRLTAO ISSN: 0031-9007
SICI: 0031-9007(20000626)84:26L.6074:LRSI;1-L
    Material Identity Number: P096-2000-031
U.S. Copyright Clearance Center Code: 0031-9007/2000/84(26)/6074(4)$15.00

Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: We report on zero-field spin splitting of two-dimensional electron systems. Though absent in the unbiased InAs square asymmetric quantum well (SAQW), the Rashba splitting becomes pronounced by applying a positive back-gate voltage. In our SAQW, the Rashba parameter alpha increases with electron density and is tuned by a factor of about 2 using an additional front gate without charging the well. We argue that the band-edge profile provides the important contribution for spin-orbit interaction due to barrier penetration of the envelope wave function. This mechanism can provide the potential for high speed implementation in spintronics.  ( 21 Refs)
Descriptors: electron density; III-V semiconductors; indium compounds; semiconductor quantum wells; spin-orbit interactions; two-dimensional electron gas; wave functions
Identifiers: large Rashba splitting; InAs quantum wells; electron wave function penetration; barrier layers; zero-field spin splitting; two-dimensional electron systems; positive back-gate voltage; Rashba parameter; electron density; band-edge profile; spin-orbit interaction; barrier penetration; envelope wave function; mechanism; spintronics; high speed implementation; InAs
Class Codes: A7320D (Electron states in low-dimensional structures); A7170E (Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter))
Chemical Indexing:
InAs int - As int - In int - InAs bin - As bin - In bin (Elements - 2)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/4 (Item 4 from file: 2)
6685236   INSPEC Abstract Number: A2000-19-7630-002
Title: Room-temperature electron spin relaxation in bulk InAs
Author Boggess, T.F.; Olesberg, J.T.; Flatte, M.E.; Lau, W.H.
Author Affiliation: Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA
Journal: Applied Physics Letters     vol.77, no.9    p. 1333-5
Publisher: AIP ,
Publication Date: 28 Aug. 2000  Country of Publication: USA
CODEN: APPLAB ISSN: 0003-6951
SICI: 0003-6951(20000828)77:9L.1333:RTES;1-0
    Material Identity Number: A135-2000-036
U.S. Copyright Clearance Center Code: 0003-6951/2000/77(9)/1333(3)/$17.00
Document Number: S0003-6951(00)03735-9
Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: Polarization-resolved, subpicosecond pump-probe measurements at a wavelength of 3.43 mu m are used to determine the electron spin relaxation time T/sub 1/ in bulk InAs at room temperature. The measured T/sub 1/ of 19+or-4 ps is in excellent agreement with the theoretical value of 21 ps, which is obtained from a nonperturbative calculation based on the D'yakonov-Perel' mechanism of precessional spin relaxation [M.I. D'yakonov and V.I. Perel', Sov. Phys. JETP 38, 177 (1974)].  ( 39 Refs)
Descriptors: electron spin polarisation; electron spin-lattice relaxation; III-V semiconductors; indium compounds; infrared spectra; time resolved spectra
Identifiers: bulk InAs; electron spin relaxation time; polarization-resolved subpicosecond pump-probe measurements; room temperature; nonperturbative calculation; D'yakonov-Perel' mechanism; precessional spin relaxation; spintronics; time-resolved differential transmission; optically injected spin polarized electrons; 300 K; 3.43 mum; 19 ps; InAs
Class Codes: A7630 (Electron paramagnetic resonance and relaxation (condensed matter)); A7847 (Ultrafast optical measurements in condensed matter); A7830G (Infrared and Raman spectra in inorganic crystals)
Chemical Indexing:
InAs bin - As bin - In bin (Elements - 2)
Numerical Indexing: temperature 3.0E+02 K; wavelength 3.43E-06 m; time 1.9E-11 s
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/5 (Item 5 from file: 2)
6667039   INSPEC Abstract Number: A2000-18-7170E-001
Title: Spintronics: electron spin coherence, entanglement, and transport
Author Das Sarma, S.; Fabian, J.; Xuedong Hu; Zutic, I.
Author Affiliation: Dept. of Phys., Maryland Univ., College Park, MD, USA
Journal: Superlattices and Microstructures Conference Title: Superlattices Microstruct. (UK)     vol.27, no.5-6    p. 289-95
Publisher: Academic Press ,
Publication Date: 2000  Country of Publication: UK
CODEN: SUMIEK ISSN: 0749-6036
SICI: 0749-6036(2000)27:5/6L.289:SESC;1-G
    Material Identity Number: H855-2000-005
U.S. Copyright Clearance Center Code: 0749-6036/2000/050289+07$35.00/0
Conference Title: Third International Workshop on Surfaces and Interfaces in Mesoscopic Devices (SIMD'99)
Conference Sponsor: Office of Naval Res.; Beckman Inst. Univ. Illinois
Conference Date: 6-10 Dec. 1999    Conference Location: Maui, HI, USA

Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: General, Review (G); Theoretical (T)
Abstract: The prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and and coherence in electronic materials, resolving in the process a long-standing puzzle of why spin relaxation is extremely fast in Al (compared with other simple metals). In the study of spin entanglement, we consider two electrons in a coupled GaAs double-quantum-dot structure and explore the Hilbert space of the double dot. The specific goal is to critically assess the quantitative aspects of the proposed spin-based quantum dot quantum computer architecture. Finally, we discuss our theory of spin-polarized transport across a semiconductor/metal interface. In particular, we study Andreev reflection, which enables us to quantify the degree of carrier spin polarization and the strength of interfacial scattering.  ( 24 Refs)
Descriptors: band structure; electron spin; semiconductor quantum dots; semiconductor-metal boundaries; spin-orbit interactions
Identifiers: electron spin coherence; spintronic devices; spin entanglement; spin transport; spin relaxation; double-quantum-dot; Hilbert space; quantum computer architecture; semiconductor/metal interface; Andreev reflection; carrier spin polarization; interfacial scattering
Class Codes: A7170E (Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter)); A7340N (Electrical properties of metal-nonmetal contacts); A7340L ( Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/6 (Item 6 from file: 2)
6658145   INSPEC Abstract Number: A2000-17-7570-007, B2000-09-3110C-004
Title: Recent topics related to iron oxide thin films
Author Fujii, T.
Author Affiliation: Fac. of Eng., Okayama Univ., Japan
Journal: Journal of the Magnetics Society of Japan     vol.23, no.11    p. 2065-70
Publisher: Magnetics Society of Japan ,
Publication Date: 1999  Country of Publication: Japan
CODEN: NOJGD3 ISSN: 0285-0192
SICI: 0285-0192(1999)23:11L.2065:RTRI;1-Z
    Material Identity Number: B296-2000-001

Language: Japanese    Document Type: Journal Paper (JP)
Treatment: General, Review (G)
Abstract: Thin films of iron oxides have recently drawn increasing attention on account of their potential applications in high-density recording and spin electronics. Molecular beam epitaxy and evaporation can be used to prepare well-crystallized films of iron oxides such as Fe/sub 3/O/sub 4/, gamma -Fe/sub 2/O/sub 3/, and alpha -Fe/sub 2/O/sub 3/, in which the layer-by-layer growth can be observed. Even well-defined epitaxial films have magnetic properties that differ intrinsically from those of bulk single crystals, because of the formation of anti-phase domains during growth and the large contribution of surface and interface effects. The surface-reconstructed structures of iron oxides are still incompletely studied. This article reviews recent studies of the growth of epitaxial iron oxide thin films, and their structural and magnetic properties.  ( 35 Refs)
Descriptors: ferromagnetic materials; iron compounds; magnetic epitaxial layers; molecular beam epitaxial growth; spin fluctuations; surface reconstruction
Identifiers: iron oxide thin films; applications; high-density recording; spin electronics; molecular beam epitaxy; evaporation; well-crystallized films; Fe/sub 3/O/sub 4/; gamma -Fe/sub 2/O/sub 3/; alpha -Fe/sub 2/O/sub 3/; layer-by-layer growth; epitaxial films; magnetic properties; antiphase domains; interface effects; surface effects; surface-reconstructed structures; reviews; structural properties; Fe/sub 2/O/sub 3/
Class Codes: A7570 (Magnetic films and multilayers); A6855 (Thin film growth, structure, and epitaxy); A8115G (Vacuum deposition); A6820 (Solid surface structure); A7550D (Ferromagnetism of nonmetals); B3110C (Ferromagnetic materials); B0520D ( Vacuum deposition)
Chemical Indexing:
Fe3O4 bin - Fe3 bin - Fe bin - O4 bin - O bin (Elements - 2)
 Fe2O3 bin - Fe2 bin - Fe bin - O3 bin - O bin (Elements - 2)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/7 (Item 7 from file: 2)
6606493   INSPEC Abstract Number: A2000-13-7360T-003, B2000-07-2230F-001
Title: Spin electronics using carbon nanotubes
Author Alphenaar, B.W.; Tsukagoshi, K.; Ago, H.
Author Affiliation: Hitachi Cambridge Lab., UK
Journal: Physica E Conference Title: Physica E (Netherlands)     vol.6, no.1-4    p. 848-51
Publisher: Elsevier ,
Publication Date: Feb. 2000  Country of Publication: Netherlands
CODEN: PELNFM ISSN: 1386-9477
SICI: 1386-9477(200002)6:1/4L.848:SEUC;1-8
    Material Identity Number: G387-2000-004
U.S. Copyright Clearance Center Code: 1386-9477/2000/$20.00
Conference Title: Proceedings of 13th International Conference on the Electronic Properties of Two-Dimensional Systems
Conference Date: 1-6 Aug. 1999    Conference Location: Ottawa, Ont., Canada
Document Number: S1386-9477(99)00233-7
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Experimental (X)
Abstract: We use ferromagnetic contacts to inject and detect spin-polarized electrons in multi-walled carbon nanotubes. The small diameter of the nanotube allows us to probe individual magnetic domains. As the alignment of the magnetizations within a pair of contacts switches from parallel to antiparallel, the nanotube resistance switches from a low to a high resistance state. This result is a first step towards the possibility of carbon nanotube-based spin electronics.  ( 15 Refs)
Descriptors: carbon nanotubes; charge injection; cobalt; contact resistance; electrical conductivity transitions; electron spin polarisation; ferromagnetic materials; magnetic domains; magnetic switching; magnetoresistance; Permalloy; quantum point contacts
Identifiers: multi-walled carbon nanotubes; magnetic domains; spin-polarized electrons; nanotube resistance switches; ferromagnetic contacts; spin electronics; differential resistance; magnetoresistance; C-Co; C-NiFe
Class Codes: A7360T (Electrical properties of fullerenes and related materials (thin films/low-dimensional structures)); A7280R (Electrical conductivity of fullerenes and related materials); A7335 (Mesoscopic systems and quantum interference); A7340C (Contact resistance, contact potential, and work functions ); A7560E (Magnetization curves, hysteresis, Barkhausen and related effects); A7260 (Mixed conductivity and conductivity transitions); A7525 (Spin arrangements in magnetically ordered materials); A7550C (Ferromagnetism of nonferrous metals and alloys); A7550B (Ferromagnetism of Fe and its alloys); A7560C (Magnetic domain walls and domain structure); A7570K (Domain structure in magnetic films (magnetic bubbles)); B2230F (Fullerene, nanotube and related devices); B0587 (Fullerenes, carbon nanotubes, and related materials (engineering materials science)); B2560X (Quantum interference devices)
Chemical Indexing:
C-Co int - Co int - C int - Co el - C el (Elements - 1,1,2)
 C-NiFe int - NiFe int - Fe int - Ni int - C int - NiFe bin - Fe bin - Ni bin - C el (Elements - 1,2,3)
  Copyright 2000, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/8 (Item 8 from file: 2)
6593314   INSPEC Abstract Number: B2000-06-1265B-072
Title: Voltage controlled spintronic devices for logic applications
Author Chun-Yeol You; Bader, S.D.
Author Affiliation: Div. of Mater. Sci., Argonne Nat. Lab., IL, USA
Journal: Journal of Applied Physics Conference Title: J. Appl. Phys. (USA)     vol.87, no.9, pt.1-3    p. 5215-17
Publisher: AIP ,
Publication Date: 1 May 2000  Country of Publication: USA
CODEN: JAPIAU ISSN: 0021-8979
SICI: 0021-8979(20000501)87:9:1/3L.5215:VCSD;1-K
    Material Identity Number: J004-2000-009
U.S. Copyright Clearance Center Code: 0021-8979/2000/87(9)/5215(3)/$17.00
Conference Title: 44th Annual Conference on Magnetism and Magnetic Materials
Conference Date: 15-18 Nov. 1999    Conference Location: San Jose, CA, USA
Document Number: S0021-8979(00)32508-7
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Applications (A); Theoretical (T)
Abstract: We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure-two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistorlike concepts and reprogrammable logic gates based on VCR elements.  ( 11 Refs)
Descriptors: exchange interactions (electron); logic gates; magnetic logic; magnetic multilayers; magnetic switching; magnetoresistive devices
Identifiers: voltage controlled spintronic devices; logic applications; logic device concepts ; magnetization orientation; voltage-controlled rotation; four-layer structure; ferromagnetic layers; nanometer-thick insulator layer; metallic spacer layer; interlayer exchange coupling; transistorlike concepts; reprogrammable logic gates
Class Codes: B1265B (Logic circuits); B3110M (Magnetic multilayers); B3120J ( Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/9 (Item 9 from file: 2)
6587150   INSPEC Abstract Number: B2000-06-3120J-010
Title: Spintronics, electronics for the next millenium?
Author Wolf, S.A.
Author Affiliation: DARPA, Defense Sci. Office, Arlington, VI, USA
Journal: Journal of Superconductivity     vol.13, no.2    p. 195-9
Publisher: Kluwer Academic/Plenum Publishers ,
Publication Date: April 2000  Country of Publication: USA
CODEN: JOUSEH ISSN: 0896-1107
SICI: 0896-1107(200004)13:2L.195:SENM;1-M
    Material Identity Number: L861-2000-002
U.S. Copyright Clearance Center Code: 0896-1107/2000/0400-0195$18.00/0

Language: English    Document Type: Journal Paper (JP)
Treatment: General, Review (G); Practical (P); Experimental (X)
Abstract: Spintronics, in which the spin degree of freedom of the electron will play an important role in addition to or in place of the charge degree of freedom in mainstream electronics will be important as we start the new millenium. The prospects for this new electronics are described.  ( 0 Refs)
Descriptors: electron spin polarisation; field effect transistors; giant magnetoresistance; magnetic storage; quantum computing; random-access storage
Identifiers: spintronics; spin degree of freedom; giant magnetoresistance devices; spin dependent tunnelling devices; magnetic RAM; spin-field effect transistor; quantum computing; spin polarised electrons
Class Codes: B3120J (Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices); B1265D (Memory circuits); B2560R (Insulated gate field effect transistors); B2560S (Other field effect devices)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/10 (Item 10 from file: 2)
6581434   INSPEC Abstract Number: A2000-11-7670E-001
Title: Dynamic nuclear Overhauser shifts in Larmor beats from a quantum well
Author Malinowski, A.; Harley, R.T.
Author Affiliation: Dept. of Phys. & Astron., Southampton Univ., UK
Journal: Solid State Communications     vol.114, no.8    p. 419-22
Publisher: Elsevier ,
Publication Date: 2000  Country of Publication: USA
CODEN: SSCOA4 ISSN: 0038-1098
SICI: 0038-1098(2000)114:8L.419:DNOS;1-C
    Material Identity Number: S075-2000-014
U.S. Copyright Clearance Center Code: 0038-1098/2000/$20.00
Document Number: S0038-1098(00)00074-0
Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: The significance of nuclear spin polarisation in time-resolved optical studies of III-V semiconductors is addressed. Electron Larmor beats in pump-probe reflectivity from a GaAs/AlGaAs quantum well show Overhauser shift of 0.7 T due to accumulated nuclear polarisation <I>I=0.065. This leads to precision values of electron g-factor, elucidates nuclear spin pumping and diffusion mechanisms in quantum wells and informs discussion of implications for spin-electronics and transport.  ( 29 Refs)
Descriptors: aluminium compounds; gallium arsenide; III-V semiconductors; interface states; Overhauser effect; reflectivity; semiconductor quantum wells
Identifiers: dynamic nuclear Overhauser shifts; Larmor beats; quantum well; nuclear spin polarisation; time-resolved optical studies; III-V semiconductors; pump-probe reflectivity; GaAs/AlGaAs; electron g-factor; nuclear spin pumping; diffusion mechanisms; GaAs-AlGaAs
Class Codes: A7670E (Dynamical nuclear polarization (condensed matter)); A7865K (Optical properties of III-V and II-VI semiconductors (thin films/low-dimensional structures)); A6865 (Low-dimensional structures: growth, structure and nonelectronic properties); A7320D (Electron states in low-dimensional structures ); A7320A (Surface states, band structure, electron density of states)
Chemical Indexing:
GaAs-AlGaAs int - AlGaAs int - GaAs int - Al int - As int - Ga int - AlGaAs ss - Al ss - As ss - Ga ss - GaAs bin - As bin - Ga bin (Elements - 2,3,3)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/11 (Item 11 from file: 2)
6539527   INSPEC Abstract Number: A2000-09-7570P-002, B2000-05-3110M-001
Title: Colossal magnetoresistance, half metallicity and spin electronics
Author Ziese, M.
Author Affiliation: Dept. of Phys. & Astron., Sheffield Univ., UK
Journal: Philosophical Transactions of the Royal Society London, Series A (Mathematical, Physical and Engineering Sciences)     vol.358, no.1765    p. 137-50
Publisher: R. Soc ,
Publication Date: 15 Jan. 2000  Country of Publication: UK
CODEN: PTMSFB ISSN: 1364-503X
SICI: 1364-503X(20000115)358:1765L.137:CMHM;1-M
    Material Identity Number: F118-2000-003

Language: English    Document Type: Journal Paper (JP)
Treatment: General, Review (G)
Abstract: The development of spin-electronic devices based on oxide magnets is reviewed. After a discussion of colossal magnetoresistance in magnetic perovskites and an introduction of the concept of half metallicity, spin-electronic devices such as ferromagnetic tunnel junctions, grain-boundary junctions, ferromagnet-superconductor hybrids and spin transistors are presented in detail. The review concludes with an outlook on future developments.  ( 32 Refs)
Descriptors: colossal magnetoresistance; electron spin polarisation; ferromagnetic materials; magnetic multilayers; magnetic thin films; reviews; spin dynamics; spin valves; tunnelling
Identifiers: spin-electronic devices; oxide magnets; colossal magnetoresistance; magnetic perovskites; half metallicity concept; ferromagnetic tunnel junctions; grain-boundary junctions; ferromagnet-superconductor hybrids; spin transistors; spin orientation; differential manipulation of current; spin diffusion length; spin polarised electrons; itinerant ferromagnets
Class Codes: A7570P (Enhanced magnetoresistance in magnetic films and multilayers); A7220M ( Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)); A7530V (Enhanced magnetoresistance in bulk magnetic materials); A7530D (Spin waves in magnetically ordered materials); A7540G (Dynamic properties of magnetic materials); A7340G (Tunnelling: general (electronic transport)); A7570C ( Interfacial magnetic properties); A0130R (Reviews and tutorial papers; resource letters); A7550R (Magnetism in interface structures); B3110M (Magnetic multilayers); B3120J (Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices); B3110C (Ferromagnetic materials)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/12 (Item 12 from file: 2)
6487482   INSPEC Abstract Number: B2000-03-4260-008
Title: Electrical spin injection in a ferromagnetic semiconductor heterostructure
Author Ohno, Y.; Young, D.K.; Beschoten, B.; Matsukura, F.; Ohno, H.; Awschalom, D.D.
Author Affiliation: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Journal: Nature     vol.402, no.6763    p. 790-2
Publisher: Macmillan Magazines ,
Publication Date: 16 Dec. 1999  Country of Publication: UK
CODEN: NATUAS ISSN: 0028-0836
SICI: 0028-0836(19991216)402:6763L.790:ESIF;1-M
    Material Identity Number: N003-1999-051
U.S. Copyright Clearance Center Code: 0028-0836/99/$12.00+2.00

Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of `spintronics', wherein the classical manipulation of electronic spin in semiconductor devices gives rise to the possibility of reading and writing non-volatile information through magnetism. Moreover, the ability to preserve coherent spin states in conventional semiconductors and quantum dots may eventually enable quantum computing in the solid state. Recent studies have shown that optically excited electron spins can retain their coherence over distances exceeding 100 micrometres. But to inject spin-polarized carriers electrically remains a formidable challenge. Here we report the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide. Electrical spin injection into a nonmagnetic semiconductor is achieved (in zero magnetic field) using a p-type ferromagnetic semiconductor as the spin polarizer. Spin polarization of the injected holes is determined directly from the polarization of the emitted electroluminescence following the recombination of the holes with the injected (unpolarized) electrons.  ( 16 Refs)
Descriptors: electroluminescence; electroluminescent devices; electron spin polarisation; electron-hole recombination; ferromagnetic materials; gallium arsenide; III-V semiconductors; magnetic semiconductors; semiconductor heterojunctions
Identifiers: electrical spin injection; ferromagnetic semiconductor heterostructure; spintronics; semiconductor devices; coherent spin states; optically excited electron spins; spin-polarized carriers; fabrication; all-semiconductor, light-emitting spintronic devices; GaAs based III-V heterostructures; injected holes; emitted electroluminescence polarization; recombination; GaAs
Class Codes: B4260 (Electroluminescent devices); B2520D (II-VI and III-V semiconductors); B3110C (Ferromagnetic materials)
Chemical Indexing:
GaAs int - As int - Ga int - GaAs bin - As bin - Ga bin (Elements - 2)
  Copyright 2000, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/13 (Item 13 from file: 2)
6410212   INSPEC Abstract Number: A2000-01-4280V-001, B2000-01-4180-001, C2000-01-5110D-001
Title: Perspective of spintronics
Author Ando, K.
Journal: Bulletin of the Electrotechnical Laboratory     vol.63, no.1-2    p. 77-85
Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki ,
Publication Date: 1999  Country of Publication: Japan
CODEN: DESIA7 ISSN: 0366-9092
SICI: 0366-9092(1999)63:1/2L.77:PS;1-2
    Material Identity Number: B061-1999-010

Language: Japanese    Document Type: Journal Paper (JP)
Treatment: Practical (P)
Abstract: Spin and charge are two fundamental attributes of electrons. A new field of electronics called spintronics uses spin to control electrons to develop new functional devices such as non-volatile computer memory, highly sensitive magnetic sensors, integrated optical devices as well as logic devices which use up- and down-spins. Background and some expected applications of spintronics are discussed.  ( 28 Refs)
Descriptors: digital storage; integrated optics; magnetic sensors; optical logic
Identifiers: spintronics; electron spin control; nonvolatile computer memory; highly sensitive magnetic sensors; integrated optical devices; logic devices
Class Codes: A4280V (Optical computers, logic elements, and interconnects); A4282 ( Integrated optics); B4180 (Optical logic devices and optical computing techniques); B7310L (Magnetic variables measurement); B7230 (Sensing devices and transducers); B4140 (Integrated optics); C5110D (Optical logic elements); C5320 (Digital storage); C3240 (Transducers and sensing devices); C5270 ( Optical computing techniques); C5120 (Logic and switching circuits)
  Copyright 1999, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/14 (Item 14 from file: 2)
6343677   INSPEC Abstract Number: A1999-20-8115I-005
Title: Perfect epitaxy of perovskite manganite for oxide spin-electronics
Author Kawasaki, M.; Izumi, M.; Konishi, Y.; Manako, T.; Tokura, Y.
Author Affiliation: Joint Res. Center for Atom Technol., Tsukuba, Japan
Journal: Materials Science & Engineering B (Solid-State Materials for Advanced Technology) Conference Title: Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland)     vol.63, no.1-2    p. 49-57
Publisher: Elsevier ,
Publication Date: 16 Aug. 1999  Country of Publication: Switzerland
CODEN: MSBTEK ISSN: 0921-5107
SICI: 0921-5107(19990816)63:1/2L.49:PEPM;1-G
    Material Identity Number: M712-1999-012
U.S. Copyright Clearance Center Code: 0921-5107/99/$20.00
Conference Title: 7th NEC Symposium on Fundamental Approaches to New Material Phases: Phase Control in Spin-Charge-Orbital Complex Systems
Conference Sponsor: NEC Corp
Conference Date: 11-15 Oct. 1998    Conference Location: Nasu, Japan
Document Number: S0921-5107(99)00051-3
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Experimental (X)
Abstract: The factors of perfection in perovskite epitaxy and heterostructures to explore a novel field of spin-electronics based on half-metallic and ferromagnetic manganite compounds are defined and demonstrated. Pulsed laser deposition technique is shown to be extremely useful for making layers with such well-defined structures as atomically smooth surface and interfaces, atomically regulated thickness, and epitaxial strain caused by the substrates, when the deposition conditions are well optimized. The importance of charge transfer and spin interaction at the interfaces are highlighted for ultra-thin films and superlattices, respectively.  ( 21 Refs)
Descriptors: antiferromagnetic materials; atomic force microscopy; epitaxial layers; ferromagnetic materials; lanthanum compounds; lattice constants; magnetisation; magnetoresistance; pulsed laser deposition; reflection high energy electron diffraction; spin dynamics; strontium compounds; superlattices; surface topography
Identifiers: perovskite; manganite; epitaxy; heterostructures; spin-electronics; ferromagnetic manganite compound; half-metallic compound; pulsed laser deposition; epitaxial strain; charge transfer; spin interaction; ultrathin films ; superlattices; AFM; atomic force microscopy; ferromagnetic antiferromagnetic superlattices; lattice constants; magnetoresistance; 4 to 400 K; (LaSr)MnO/sub 3/; (LaSr)MnO/sub 3/-(LaSr)FeO/sub 3/
Class Codes: A8115I (Pulsed laser deposition); A6820 (Solid surface structure); A6855 (Thin film growth, structure, and epitaxy); A6860 (Physical properties of thin films, nonelectronic); A6865 (Low-dimensional structures: growth, structure and nonelectronic properties); A7220M (Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)); A7540G (Dynamic properties of magnetic materials); A7550D (Ferromagnetism of nonmetals); A7550E (Antiferromagnetics); A7560E (Magnetization curves, hysteresis, Barkhausen and related effects); A7570C (Interfacial magnetic properties)
Chemical Indexing:
LaSrMnO3 ss - La ss - Mn ss - O3 ss - Sr ss - O ss (Elements - 4)
  LaSrMnO3-LaSrFeO3 int - LaSrFeO3 int - LaSrMnO3 int - FeO3 int - Fe int - La int - Mn int - O3 int - Sr int - O int - LaSrFeO3 ss - LaSrMnO3 ss - FeO3 ss - Fe ss - La ss - Mn ss - O3 ss - Sr ss - O ss (Elements - 4,4,5)
Numerical Indexing: temperature 4.0E+00 to 4.0E+02 K
  Copyright 1999, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/15 (Item 15 from file: 2)
6343668   INSPEC Abstract Number: A1999-20-0130C-027
Title: 7th NEC Symposium on Fundamental Approaches to New Material Phases: Phase Control in Spin-Charge-Orbital Complex Systems
Journal: Materials Science & Engineering B (Solid-State Materials for Advanced Technology)     vol.63, no.1-2
Publisher: Elsevier ,
Publication Date: 16 Aug. 1999  Country of Publication: Switzerland
CODEN: MSBTEK ISSN: 0921-5107
    Material Identity Number: M712-1999-012
U.S. Copyright Clearance Center Code: 99/$20.00
Conference Title: 7th NEC Symposium on Fundamental Approaches to New Material Phases: Phase Control in Spin-Charge-Orbital Complex Systems
Conference Sponsor: NEC Corp
Conference Date: 11-15 Oct. 1998    Conference Location: Nasu, Japan

Language: English    Document Type: Conference Proceedings (CP); Journal Paper (JP)
Treatment: Experimental (X); Theoretical (T)
Abstract: The following topics were dealt with: strongly electron-correlated systems, spin-charge coupled phenomena, transition metal oxides, diluted magnetic semiconductors, spin electronics, oxide electronics, magnetoelectronic properties, charge ordering, orbital ordering, colossal magnetoresistance, field-induced metal-insulator transitions, spin dynamics, charge dynamics.
Descriptors: charge-ordered states; colossal magnetoresistance; electron-phonon interactions; heavy fermion systems; Jahn-Teller effect; magnetic structure; metal-insulator transition; phase separation; semimagnetic semiconductors; spin dynamics; spin fluctuations; spin-orbit interactions; spin-spin coupling; strongly correlated electron systems; transition metal compounds
Identifiers: strongly electron-correlated systems; spin-charge coupled phenomena; transition metal oxides; diluted magnetic semiconductors; spin electronics; oxide electronics; magnetoelectronic properties; charge ordering; orbital ordering; colossal magnetoresistance; metal-insulator transitions; spin dynamics; charge dynamics
Class Codes: A0130C (Conference proceedings); A7127 (Strongly correlated electron systems); A7128 (Narrow-band systems, heavy-fermion metals; intermediate-valence solids); A7130 (Metal-insulator transitions and other electronic transitions); A7138 ( Polarons and electron-phonon interactions); A7145G (Exchange, correlation, dielectric and magnetic functions, plasmons); A7150 (Localized single-particle electronic states); A7220M (Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)); A7525 (Spin arrangements in magnetically ordered materials); A7530V (Enhanced magnetoresistance in bulk magnetic materials); A7540G (Dynamic properties of magnetic materials); A7550P (Magnetic semiconductors); A7170E (Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter))
  Copyright 1999, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/16 (Item 16 from file: 2)
6335046   INSPEC Abstract Number: A1999-19-7570C-061
Title: Tunnel-MR and spin electronics in metal-nonmetal granular systems
Author Mitani, S.; Fujimori, H.; Takanashi, K.; Yakushiji, K.; Ha, J.-G.; Takahashi, S. ; Maekawa, S.; Ohnuma, S.; Kobayashi, N.; Masumoto, T.; Ohnuma, M.; Hono, K.
Author Affiliation: Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Journal: Journal of Magnetism and Magnetic Materials Conference Title: J. Magn. Magn. Mater. (Netherlands)     vol.198-199    p. 179-84
Publisher: Elsevier ,
Publication Date: June 1999  Country of Publication: Netherlands
CODEN: JMMMDC ISSN: 0304-8853
SICI: 0304-8853(199906)198/199L.179:TSEM;1-2
    Material Identity Number: J271-1999-013
U.S. Copyright Clearance Center Code: 0304-8853/99/$20.00
Conference Title: Third International Symposium on Metallic Multilayers (MML'98)
Conference Date: 14-19 June 1998    Conference Location: Vancouver, BC, Canada
Document Number: S0304-8853(98)01041-5
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Experimental (X)
Abstract: Recent advances in the researches of tunnel-magnetoresistance (tunnel-MR) in metal-nonmetal granular systems are overviewed, showing mainly our results on Co-Al-O films. Electron microscopy observations revealed that sputter-deposited Co-Al-O films possess well-defined metal-nonmetal granular structures with Co granules of 2-3 nm in diameter. Anomalous temperature and bias-voltage dependence of MR was found in Co-Al-O granular films, and was explained by a theory of spin-dependent higher-order tunneling. Magnetic field sensitivity of tunnel-MR in metal-nonmetal granular systems was dramatically improved by means of granular-in-gap (GIG) structures. Perspectives for the future application are also discussed with GIGs.  ( 39 Refs)
Descriptors: alumina; cobalt; Coulomb blockade; granular structure; magnetic thin films; magnetoresistance; mesoscopic systems; sputtered coatings; transmission electron microscopy; tunnelling
Identifiers: metal-nonmetal granular systems; spin electronics; tunnel-magnetoresistance; TEM ; transmission electron microscopy; sputter-deposited films; temperature dependence; bias-voltage dependence; spin-dependent higher-order tunneling; magnetic field sensitivity; granular-in-gap structure; Coulomb blockade; mesoscopic system; 2 to 3 nm; 4 to 300 K; CoAlO
Class Codes: A7570C (Interfacial magnetic properties); A7335C (Coulomb blockade; quantum tunnelling); A7340N (Electrical properties of metal-nonmetal contacts)
Chemical Indexing:
CoAlO ss - Al ss - Co ss - O ss (Elements - 3)
Numerical Indexing: size 2.0E-09 to 3.0E-09 m; temperature 4.0E+00 to 3.0E+02 K
  Copyright 1999, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/17 (Item 17 from file: 2)
6335027   INSPEC Abstract Number: B1999-10-3120J-002
Title: The spin-valve transistor: technologies and progress
Author Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.
Author Affiliation: Inf. Storage Technol. Group, Twente Univ., Netherlands
Journal: Journal of Magnetism and Magnetic Materials Conference Title: J. Magn. Magn. Mater. (Netherlands)     vol.198-199    p. 119-24
Publisher: Elsevier ,
Publication Date: June 1999  Country of Publication: Netherlands
CODEN: JMMMDC ISSN: 0304-8853
SICI: 0304-8853(199906)198/199L.119:SVTT;1-U
    Material Identity Number: J271-1999-013
U.S. Copyright Clearance Center Code: 0304-8853/99/$20.00
Conference Title: Third International Symposium on Metallic Multilayers (MML'98)
Conference Date: 14-19 June 1998    Conference Location: Vancouver, BC, Canada
Document Number: S0304-8853(98)01241-4
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Experimental (X)
Abstract: The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350*350 mu m/sup 2/ SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.  ( 20 Refs)
Descriptors: cobalt; copper; etching; giant magnetoresistance; interface structure; magnetic multilayers; photolithography; spin valves; thin film transistors; transmission electron microscopy
Identifiers: spin-valve transistor; room temperature operation; spin valve effect; magnetic controlled metal base transistor; Si emitter; Si collector; giant magnetoresistance multilayer; metal bonding technology; photolithography; etching; interface structure; spin electronics; TEM; transmission electron microscopy; 7.5 to 65 angstrom; 77 to 300 K; Si-Co-Cu-Co-Si
Class Codes: B3120J (Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices); B2550E (Surface treatment (semiconductor technology)); B2550G ( Lithography (semiconductor technology)); B2560Z (Other semiconductor devices)
Chemical Indexing:
Si-Co-Cu-Co-Si int - Co int - Cu int - Si int - Co el - Cu el - Si el (Elements - 1,1,1,1,1,3)
Numerical Indexing: size 7.5E-10 to 6.5E-09 m; temperature 7.7E+01 to 3.0E+02 K
  Copyright 1999, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/18 (Item 18 from file: 2)
6334796   INSPEC Abstract Number: A1999-19-0130R-001, B1999-10-3110-002
Title: Whither magnetic materials?
Author Coey, J.M.D.
Author Affiliation: Dept. of Phys., Trinity Coll., Dublin, Ireland
Journal: Journal of Magnetism and Magnetic Materials Conference Title: J. Magn. Magn. Mater. (Netherlands)     vol.196-197    p. 1-7
Publisher: Elsevier ,
Publication Date: May 1999  Country of Publication: Netherlands
CODEN: JMMMDC ISSN: 0304-8853
SICI: 0304-8853(199905)196/197L.1:WMM;1-W
    Material Identity Number: J271-1999-011
U.S. Copyright Clearance Center Code: 0304-8853/99/$20.00
Conference Title: 7th European Magnetic Materials and Applications Conference
Conference Date: 9-12 Sept. 1998    Conference Location: Zaragoza, Spain
Document Number: S0304-8853(98)00641-6
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: General, Review (G); Experimental (X); Practical (P)
Abstract: The three main areas of application for magnetic materials are (i) guiding flux in electromagnetic machines (soft magnets), (ii) magnetic recording (semi-hard magnets) and (iii) dynamic and static permanent magnet applications (hard magnets). Progress in the 20th century has been spectacular, advancing from a set of poorly differentiated hard and soft steels to a spectrum of materials exhibiting coercivity ranging from 0.1 A/m to 1 MA/m, anisotropy from 10 J/m/sup 3/ to 10 MJ/m/sup 3/ and saturation magnetostriction ranging from less than 10/sup -7/ to 3*10/sup -3/. But there have been no advances in the maximum values of spontaneous magnetization and Curie temperature. Current trends in magnetic materials, including ternary and higher compounds, nanocrystalline magnets, composite magnetic nanostructures, artificially structured magnets and spin electronics are mentioned. Some unexplained magnetic phenomena are highlighted.  ( 21 Refs)
Descriptors: coercive force; composite materials; Curie temperature; electromagnetic devices; magnetic anisotropy; magnetic recording; magnetostriction; nanostructured materials; permanent magnets; soft magnetic materials; spontaneous magnetisation
Identifiers: magnetic materials; electromagnetic machines; magnetic recording; static permanent magnet applications; coercivity; saturation magnetostriction; magnetic anisotropy; spontaneous magnetization; Curie temperature; nanocrystalline magnets; composite magnetic nanostructures; spin electronics; artificially structured magnets
Class Codes: A0130R (Reviews and tutorial papers; resource letters); A7530G (Magnetic anisotropy); A7530K (Magnetic phase boundaries); A7550K (Amorphous and nanostructured magnetic materials); A7550S (Magnetic recording materials); A7550V (High coercivity magnetic materials); A7580 (Magnetomechanical and magnetoelectric effects, magnetostriction); B3110 (Magnetic materials); B3120 (Magnetic material applications and devices)
  Copyright 1999, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/19 (Item 19 from file: 2)
6326664   INSPEC Abstract Number: A1999-19-7210-001, B1999-10-2520-001
Title: Spin relaxation of conduction electrons
Author Fabian, J.; Sarma, S.D.
Author Affiliation: Dept. of Phys., Maryland Univ., College Park, MD, USA
Journal: Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) Conference Title: J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)     vol.17, no.4    p. 1708-15
Publisher: AIP for American Vacuum Soc ,
Publication Date: July 1999  Country of Publication: USA
CODEN: JVTBD9 ISSN: 0734-211X
SICI: 0734-211X(199907)17:4L.1708:SRCE;1-J
    Material Identity Number: C067-1999-004
U.S. Copyright Clearance Center Code: 0734-211X/99/17(4)/1708(8)/$15.00
Conference Title: 26th Conference on the Physics and Chemistry of Semiconductor Interfaces
Conference Date: 17-21 Jan. 1999    Conference Location: San Diego, CA, USA
Document Number: S0734-211X(99)03604-5
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Bibliography (B); General, Review (G)
Abstract: Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals.  ( 64 Refs)
Descriptors: electron spin polarisation; electron-hole recombination; exchange interactions (electron); metals; photoexcitation; reviews; semiconductors; spin dynamics; spin fluctuations; spin-orbit interactions; transistors
Identifiers: spin relaxation; conduction electrons; spin-polarized currents; spin-electronic devices; spin memory; relaxation modulation; doping effect; alloying effect; dimensionality change; nonmagnetic semiconductors; metals; spintronics; spin diffusion length; spin dynamics; spin injection technique; electron-hole recombination; spin transistors; optical orientation; spin orbit interaction; spin flip scattering; spin degeneracy; Bloch states; exchange interaction; spin fluctuation; quantum wells; spin splitting; spin hot spot; quantum bit
Class Codes: A7210 (Theory of electronic transport; scattering mechanisms); A0130R (Reviews and tutorial papers; resource letters); A7170G (Exchange interactions (condensed matter)); A7170E (Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter)); B2520 (Semiconductor theory, materials and properties)
  Copyright 1999, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/20 (Item 20 from file: 2)
6180001   INSPEC Abstract Number: A1999-07-7820L-002
Title: Lateral drag of spin coherence in gallium arsenide
Author Kikkawa, J.M.; Awschalom, D.D.
Author Affiliation: Dept. of Phys., California Univ., Santa Barbara, CA, USA
Journal: Nature     vol.397, no.6715    p. 139-41
Publisher: Macmillan Magazines ,
Publication Date: 14 Jan. 1999  Country of Publication: UK
CODEN: NATUAS ISSN: 0028-0836
SICI: 0028-0836(19990114)397:6715L.139:LDSC;1-P
    Material Identity Number: N003-1999-002
U.S. Copyright Clearance Center Code: 0028-0836/99/$12.00+2.00

Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: The importance of spin-transport phenomena in condensed-matter physics has increased over the past decade with the advent of metallic giant-magnetoresistive systems and spin-valve transistors. An extension of such phenomena to semiconductors should create possibilities for seamless integration of `spin electronics' with existing solid-state devices, and may someday enable quantum computing schemes using electronic spins as non-local mediators of coherent nuclear spin interactions. But to realize such goals, spin transport must be effected without destroying the relevant spin information. Here we report time-resolved optical studies of non-local Faraday rotation in n-type bulk gallium arsenide, which show macroscopic lateral transport of coherently precessing electronic spins over distances exceeding 100 micrometres. The ability to drag these spin packets by their negative charge, without a substantial increase in spin decoherence, is a consequence of the rather weak entanglement of spin coherence with orbital motion in this system.  ( 8 Refs)
Descriptors: Faraday effect; gallium arsenide; III-V semiconductors; spin dynamics; spin-orbit interactions; time resolved spectra
Identifiers: lateral drag; spin coherence; gallium arsenide; spin-transport phenomena; spin electronics; coherent nuclear spin interactions; time-resolved optical studies; nonlocal Faraday rotation; n-type bulk gallium arsenide; coherently precessing electronic spins; spin packets; weak entanglement; orbital motion; 100 mum; GaAs
Class Codes: A7820L (Magneto-optical effects (condensed matter)); A7540G (Dynamic properties of magnetic materials); A7170E (Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter)); A7847 (Ultrafast optical measurements in condensed matter)
Chemical Indexing:
GaAs bin - As bin - Ga bin (Elements - 2)
Numerical Indexing: distance 1.0E-04 m
  Copyright 1999, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/21 (Item 21 from file: 2)
6176570   INSPEC Abstract Number: A1999-07-7855-023
Title: Spin injection into semiconductors
Author Oestreich, M.; Hubner, J.; Hagele, D.; Klar, P.J.; Heimbrodt, W.; Ruhle, W.W.; Ashenford, D.E.; Lunn, B.
Author Affiliation: Fachbereich Phys. und Wissenschaftliches, Philipps-Univ., Marburg, Germany
Journal: Applied Physics Letters     vol.74, no.9    p. 1251-3
Publisher: AIP ,
Publication Date: 1 March 1999  Country of Publication: USA
CODEN: APPLAB ISSN: 0003-6951
SICI: 0003-6951(19990301)74:9L.1251:SIIS;1-P
    Material Identity Number: A135-1999-008
U.S. Copyright Clearance Center Code: 0003-6951/99/74(9)/1251(3)/$15.00
Document Number: S0003-6951(99)00709-3
Language: English    Document Type: Journal Paper (JP)
Treatment: Practical (P); Experimental (X)
Abstract: The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd/sub 0.98/Mn/sub 0.02/Te/CdTe structure proves the feasibility of the spin-alignment mechanism.  ( 15 Refs)
Descriptors: cadmium compounds; II-VI semiconductors; manganese compounds; photoluminescence; semimagnetic semiconductors; time resolved spectra
Identifiers: spin-polarized electrons injection; semiconductor spin electronics; diluted magnetic semiconductors; time-resolved photoluminescence; Cd/sub 0.98/Mn/sub 0.02/Te/CdTe; Cd/sub 0.98/Mn/sub 0.02/Te-CdTe
Class Codes: A7855E (Photoluminescence in II-VI and III-V semiconductors); A7847 (Ultrafast optical measurements in condensed matter); A7865K (Optical properties of III-V and II-VI semiconductors (thin films/low-dimensional structures))
Chemical Indexing:
Cd0.98Mn0.02Te-CdTe int - Cd0.98Mn0.02Te int - Cd0.98 int - Mn0.02 int - CdTe int - Cd int - Mn int - Te int - Cd0.98Mn0.02Te ss - Cd0.98 ss - Mn0.02 ss - Cd ss - Mn ss - Te ss - CdTe bin - Cd bin - Te bin (Elements - 3,2,3)
  Copyright 1999, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/22 (Item 22 from file: 2)
6021754   INSPEC Abstract Number: A9820-7220H-006, B9810-2520D-020
Title: Spin transport in GaAs
Author Hagele, D.; Oestreich, M.; Ruhle, W.W.; Nestle, N.; Eberl, K.
Author Affiliation: Fachbereich Phys., Philipps-Univ., Marburg, Germany
Journal: Applied Physics Letters     vol.73, no.11    p. 1580-2
Publisher: AIP ,
Publication Date: 14 Sept. 1998  Country of Publication: USA
CODEN: APPLAB ISSN: 0003-6951
SICI: 0003-6951(19980914)73:11L.1580:STG;1-Y
    Material Identity Number: A135-98037
U.S. Copyright Clearance Center Code: 0003-6951/98/73(11)/1580(3)/$15.00
Document Number: S0003-6951(98)04337-X
Language: English    Document Type: Journal Paper (JP)
Treatment: Practical (P); Experimental (X)
Abstract: We present a spectroscopic method for studying spin transport in semiconductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high electric fields. We demonstrate an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 mu m and fields up to 6 kV/cm.  ( 7 Refs)
Descriptors: electron mobility; gallium arsenide; high field effects; III-V semiconductors; spin dynamics
Identifiers: GaAs; spin transport; time-resolved experiments; spin electronics; spin-polarized electron drift; typical device lengths; high electric fields
Class Codes: A7220H (High-field and nonlinear effects (semiconductors/insulators)); A7280E ( Conductivity of III-V and II-VI semiconductors); B2520D (II-VI and III-V semiconductors)
Chemical Indexing:
GaAs bin - As bin - Ga bin (Elements - 2)
  Copyright 1998, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/23 (Item 23 from file: 2)
5910560   INSPEC Abstract Number: A9812-7960-005
Title: Direct evidence for a half-metallic ferromagnet
Author Park, J.-H.; Vescovo, E.; Kim, H.-J.; Kwon, C.; Ramesh, R.; Venkatesan, T.
Author Affiliation: Nat. Synchrotron Light Source, Brookhaven Nat. Lab., Upton, NY, USA
Journal: Nature     vol.392, no.6678    p. 794-6
Publisher: Macmillan Magazines ,
Publication Date: 23 April 1998  Country of Publication: UK
CODEN: NATUAS ISSN: 0028-0836
SICI: 0028-0836(19980423)392:6678L.794:DEHM;1-G
    Material Identity Number: N003-98017
U.S. Copyright Clearance Center Code: 0028-0836/98/$12.00+2.00

Language: English    Document Type: Journal Paper (JP)
Treatment: Experimental (X)
Abstract: Half-metallic materials are characterized by the coexistence of metallic behaviour for one electron spin and insulating behaviour for the other. Thus, the electronic density of states is completely spin polarized at the Fermi level, and the conductivity is dominated by these metallic single-spin charge carriers. This exotic physical property could have a significant effect on technological applications related to magnetism and spin electronics. Some ferromagnetic systems, such as Heusler compounds and chromium dioxide, have been predicted theoretically to be half-metallic. However, a half-metallic system has not been demonstrated directly and the predictions are still in doubt. Here we report spin-resolved photoemission measurements of a ferromagnetic manganese perovskite, La/sub 0.7/Sr/sub 0.3/MnO/sub 3/, which directly manifest the half-metallic nature well below the Curie temperature. For the majority spin, the photoemission spectrum clearly shows a metallic Fermi cut-off, whereas for the minority spin, it shows an insulating gap with disappearance of spectral weight at ~0.6 eV binding energy.  ( 24 Refs)
Descriptors: ferromagnetic materials; lanthanum compounds; magnetic epitaxial layers; photoelectron spectra; spin polarised electron emission; strontium compounds
Identifiers: half-metallic ferromagnet; metallic behaviour; one electron spin; insulating behaviour; electronic density of states; Fermi level; conductivity; single-spin charge carriers; spin electronics; magnetism; Heusler compounds; spin-resolved photoemission measurements; manganese perovskite; La/sub 0.7/Sr/sub 0.3/MnO/sub 3/; Curie temperature; metallic Fermi cut-off; spectral weight; binding energy
Class Codes: A7960 (Photoemission and photoelectron spectra (condensed matter)); A7550D ( Ferromagnetism of nonmetals); A7570C (Interfacial magnetic properties of films and multilayers)
Chemical Indexing:
La0.7Sr0.3MnO3 ss - La0.7 ss - Sr0.3 ss - La ss - Mn ss - O3 ss - Sr ss - O ss (Elements - 4)
  Copyright 1998, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/24 (Item 24 from file: 2)
5846011   INSPEC Abstract Number: A9807-7220F-010, B9804-2520C-008
Title: The art of sp up arrow n electron down arrow cs
Author Gregg, J.; Allen, W.; Viart, N.; Kirschman, R.; Sirisathitkul, C.; Schille, J.-P.; Gester, M.; Thompson, S.; SparKS, P.; Da Costa, V.; Ounadjela, K.; Skvarla, M.
Author Affiliation: Clarendon Lab., Oxford Univ., UK
Journal: Journal of Magnetism and Magnetic Materials Conference Title: J. Magn. Magn. Mater. (Netherlands)     vol.175, no.1-2    p. 1-9
Publisher: Elsevier ,
Publication Date: Nov. 1997  Country of Publication: Netherlands
CODEN: JMMMDC ISSN: 0304-8853
SICI: 0304-8853(199711)175:1/2L.1:E;1-0
    Material Identity Number: J271-98003
U.S. Copyright Clearance Center Code: 0304-8853/97/$17.00
Conference Title: First Toyota Workshop on Magnetism and Magnetic Materials for High Density Information Storage
Conference Sponsor: Toyota School Found.; Toyota Technol. Inst.; Toyota Motor Eur.; et al
Conference Date: 17-18 April 1997    Conference Location: Brussels, Belgium
Document Number: S0304-8853(97)00155-8
Language: English    Document Type: Conference Paper (PA); Journal Paper (JP)
Treatment: Experimental (X)
Abstract: A brief history is given of the nascent field of spin electronics in which the ability to differentially manipulate up- and down-spin current carriers is exploited. We discuss the impending marriage of spin-dependent effects with semiconductor technology and, in particular, the exploitation of spin-dependent transport in the semiconductors themselves. In this connection, preliminary experiments are described which explore spin transport in ion-implanted silicon. We conclude by evaluating various potential applications of the devices made possible by this exciting new development in electronic technology.  ( 11 Refs)
Descriptors: carrier density; electron spin polarisation; elemental semiconductors; giant magnetoresistance; ion implantation; magnetic sensors; semiconductor thin films; silicon; spin dynamics; transistors
Identifiers: spin electronics; history; current carrier spin orientation; spin-dependent effects; semiconductor technology; spin transport; ion-implanted silicon; spin diffusion length; magnetic field sensor; spin accumulation; spin transistor; Si
Class Codes: A7220F (Low-field transport and mobility; piezoresistance (semiconductors/insulators)); A0755 (Magnetic instruments and techniques); A6170T (Doping and implantation of impurities); A7220M (Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)); A7220H (High-field and nonlinear effects (semiconductors/insulators)); A7360F (Electronic properties of semiconductor thin films); A7540G (Dynamic properties of magnetic materials); B2520C (Elemental semiconductors); B2560 (Semiconductor devices); B7310L (Magnetic variables measurement)
Chemical Indexing:
Si el (Elements - 1)
  Copyright 1998, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/25 (Item 25 from file: 2)
5846010   INSPEC Abstract Number: A9807-0130C-045, B9804-0100-031
Title: First Toyota Workshop on Magnetism and Magnetic Materials for High Density Information Storage
Journal: Journal of Magnetism and Magnetic Materials     vol.175, no.1-2
Publisher: Elsevier ,
Publication Date: Nov. 1997  Country of Publication: Netherlands
CODEN: JMMMDC ISSN: 0304-8853
    Material Identity Number: J271-98003
U.S. Copyright Clearance Center Code: 97/$17.00
Conference Title: First Toyota Workshop on Magnetism and Magnetic Materials for High Density Information Storage
Conference Sponsor: Toyota School Found.; Toyota Technol. Inst.; Toyota Motor Eur.; et al
Conference Date: 17-18 April 1997    Conference Location: Brussels, Belgium

Language: English    Document Type: Conference Proceedings (CP); Journal Paper (JP)
Treatment: Experimental (X); Theoretical (T)
Abstract: The following topics were dealt with: magnetic thin films, magnetic multilayers, magnetism, magnetic structure, magneto optical effects, magneto optical materials, magnetic recording, recording materials, microstructure, material characterization methods.
Descriptors: Faraday effect; giant magnetoresistance; Kerr magneto-optical effect; magnetic film stores; magnetic force microscopy; magnetic multilayers; magnetic recording ; magnetic structure; magnetic thin films; magnetisation reversal; magneto-optical recording; metallic superlattices; perpendicular magnetic anisotropy
Identifiers: proceedings; magnetic materials; magnetic thin films; magnetic multilayers; magnetism; magnetic structure; information storage; magneto optical effects; magnetic recording; microstructure; spin electronics; magneto electronics; spin transistor
Class Codes: A0130C (Conference proceedings); A6116P (Scanning tunnelling microscopy and related techniques); A6865 (Layer structures, intercalation compounds and superlattices: growth, structure and nonelectronic properties); A7215G ( Galvanomagnetic and other magnetotransport effects (metals/alloys)); A7340J ( Metal-to-metal contacts); A7360D (Electronic properties of metallic thin films); A7525 (Spin arrangements in magnetically ordered materials ); A7530G (Magnetic anisotropy); A7550R (Magnetism in interface structures); A7560E (Magnetization curves, hysteresis, Barkhausen and related effects); A7570F (Magnetic ordering in multilayers); A7820L (Magneto-optical effects (condensed matter)); A7865E ( Optical properties of metallic thin films); A7570C (Interfacial magnetic properties of films and multilayers); B0100 (General electrical engineering topics); B3110M (Magnetic multilayers); B3120B (Magnetic recording ); B3120N ( Magnetic thin film devices)
  Copyright 1998, FIZ Karlsruhe
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/26 (Item 26 from file: 2)
5583511   INSPEC Abstract Number: A9712-7560E-012
Title: Overview of modern magnetism
Author Coey, J.M.D.
Author Affiliation: Dept. of Phys., Trinity Coll., Dublin, Ireland
Conference Title: Aspects of Modern Magnetism. Lecture Notes of the Eighth Chinese International Summer School of Physics    p. 2-36
Editor(s): Pu, F.C.; Wang, Y.J.; Shang, C.H.
Publisher: World Scientific , Singapore
Publication Date: 1996  Country of Publication: Singapore   xiv+269 pp.
ISBN: 981 02 2601 2     Material Identity Number: XX96-01687
Conference Title: Proceedings of Eighth International Summer School of Aspects of Modern Magnetism
Conference Date: 28 Aug.-7 Sept. 1995    Conference Location: Beijing, China

Language: English    Document Type: Conference Paper (PA)
Treatment: General, Review (G)
Abstract: After a sketch of the historical background to modern magnetism, some recent developments in experimental techniques, magnetic materials, nanostructures and spin electronics are reviewed. New magnet applications are presented, and the survey ends with some remarks on the broader social perspectives of research in applied science.  ( 71 Refs)
Descriptors: magnetic materials; magnetisation; magnetism; nanostructured materials
Identifiers: modern magnetism; historical background; experimental techniques; magnetic materials; nanostructures; spin electronics
Class Codes: A7560E (Magnetization curves, hysteresis, Barkhausen and related effects); A7510 (General theory and models of magnetic ordering)
  Copyright 1997, IEE
INSPEC (Dialog® File 2): (c) 2000 Institution of Electrical Engineers. All rights reserved.


2/5/27 (Item 1 from file: 34)
09148534   Genuine Article#: 372PG   Number of References: 87
Spintronics and quantum dots for quantum computing and quantum communication

Author: Burkard G (REPRINT) ; Engel HA; Loss D
Corporate Source: UNIV BASEL,DEPT PHYS & ASTRON, KLINGELBERGSTR 82/CH-4056 BASEL//SWITZERLAND/ (REPRINT)
Journal: FORTSCHRITTE DER PHYSIK-PROGRESS OF PHYSICS , 2000 , V 48 , N9-11 , P 965-986
ISSN: 0015-8208   Publication date: 20000000
Publisher: WILEY-V C H VERLAG GMBH , PO BOX 10 11 61, D-69451 BERLIN, GERMANY
Language: English   Document Type: ARTICLE
Geographic Location: SWITZERLAND
Subfile: CC PHYS--Current Contents, Physical, Chemical & Earth Sciences
Journal Subject Category: PHYSICS
Abstract: Control over electron-spin states, such as coherent manipulation, filtering and measurement promises access to new technologies in conventional as well as in quantum computation and quantum communication. We review our proposal of using electron spins in quantum confined structures as qubits and discuss the requirements for implementing a quantum computer. We describe several realizations of one- and two-qubit gates and of the read-in and read-out tasks. We discuss recently proposed schemes for using a single quantum dot as spin-filter and spin-memory device. Considering electronic EPR pairs needed Tor quantum communication we show that their spin entanglement can be detected in mesoscopic transport measurements using metallic as well as superconducting leads attached to the dots.
Identifiers-- KeyWord Plus(R): ERROR-CORRECTING CODES; PODOLSKY-ROSEN CHANNELS; JOSEPHSON-JUNCTIONS; MESOSCOPIC SYSTEMS; BELL INEQUALITIES; SCATTERING-THEORY; HANBURY-BROWN; SPIN; COMPUTATION; NOISE
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SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/28 (Item 2 from file: 34)
08880655   Genuine Article#: 340AR   Number of References: 34
Spintronics: electron spin coherence, entanglement, and transport

Author: DasSarma S (REPRINT) ; Fabian J; Hu XD; Zutic I
Corporate Source: UNIV MARYLAND,DEPT PHYS/COLLEGE PK//MD/20742 (REPRINT)
Journal: SUPERLATTICES AND MICROSTRUCTURES , 2000 , V 27 , N5-6 ( MAY-JUN ) , P 289-295
ISSN: 0749-6036   Publication date: 20000500
Publisher: ACADEMIC PRESS LTD , 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND
Language: English   Document Type: ARTICLE
Geographic Location: USA
Subfile: CC PHYS--Current Contents, Physical, Chemical & Earth Sciences
Journal Subject Category: PHYSICS, CONDENSED MATTER
Abstract: The prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and coherence in electronic materials, resolving in the process a long-standing puzzle of why spin relaxation is extremely fast in Al (compare with other simple metals). In the study of spin entanglement, we consider two electrons in a coupled GaAs double-quantum-dot structure and explore the Hilbert space of the double dot. The specific goal is to critically assess the quantitative aspects of the proposed spin-based quantum dot quantum computer architecture. Finally we discuss our theory of spin-polarized transport across a semiconductor/metal interface. In particular, we study Andreev reflection, which enables us to quantify the degree of carrier spin polarization and the strength of interfacial scattering. (C) 2000 Academic Press.
Descriptors--Author Keywords: spintronics ; spin coherence ; spin relaxation ; spin-hot-spot model ; spin entanglement ; electron exchange ; spin transport ; Andreev reflection ; spin tunneling
Identifiers-- KeyWord Plus(R): SUPERCONDUCTOR JUNCTIONS; CONDUCTION ELECTRONS; ANDREEV REFLECTION; QUANTUM DOTS; RELAXATION; SEMICONDUCTORS; INJECTION; INTERFACE; METALS
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ANDREEV AF, 1964, V46, P1823, ZH EKSP TEOR FIZ
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SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/29 (Item 3 from file: 34)
08627118   Genuine Article#: 308RT   Number of References: 11
Voltage controlled spintronic devices for logic applications

Author: You CY (REPRINT) ; Bader SD
Corporate Source: ARGONNE NATL LAB,DIV MAT SCI, 9700 S CASS AVE/ARGONNE//IL/60439 (REPRINT)
Journal: JOURNAL OF APPLIED PHYSICS , 2000 , V 87 , N9,2 ( MAY 1 ) , P 5215-5217
ISSN: 0021-8979   Publication date: 20000501
Publisher: AMER INST PHYSICS , 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501
Language: English   Document Type: ARTICLE
Geographic Location: USA
Subfile: CC PHYS--Current Contents, Physical, Chemical & Earth Sciences
Journal Subject Category: PHYSICS, APPLIED
Abstract: We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure-two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistorlike concepts and reprogrammable logic gates based on VCR elements. (C) 2000 American Institute of Physics. [S0021-8979(00)32508-7].
Identifiers-- KeyWord Plus(R): TUNNEL-JUNCTIONS; INTERLAYER; MAGNETORESISTANCE
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SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/30 (Item 4 from file: 34)
08589450   Genuine Article#: 304UU   Number of References: 0
How about replacing electronics with spintronics?

Author: Gawel R
Journal: ELECTRONIC DESIGN , 2000 , V 48 , N8 ( APR 17 ) , P 30-30
ISSN: 0013-4872   Publication date: 20000417
Publisher: PENTON MEDIA, INC , 1100 SUPERIOR AVE, CLEVELAND, OH 44114-2543
Language: English   Document Type: NEWS ITEM
Subfile: CC ENGI--Current Contents, Engineering, Computing & Technology
Journal Subject Category: ENGINEERING, ELECTRICAL & ELECTRONIC
SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/31 (Item 5 from file: 34)
07830372   Genuine Article#: 213BY   Number of References: 0
Will spintronics replace conventional electronics?

Author: Studt T
Journal: R&D MAGAZINE , 1999 , V 41 , N8 ( JUL ) , P 14-16
ISSN: 0746-9179   Publication date: 19990700
Publisher: CAHNERS-DENVER PUBLISHING CO , 2000 CLEARWATER DR, OAK BROOK, IL 60523-8809
Language: English   Document Type: ARTICLE
Subfile: CC ENGI--Current Contents, Engineering, Computing & Technology
Journal Subject Category: MULTIDISCIPLINARY SCIENCES; ENGINEERING, INDUSTRIAL
Abstract: Development of totally nonvolatile, high-density, high-speed, low-power, low-cost devices based on electron spin-dependent effects could exceed the performance of traditional semiconductor-based devices.
SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/32 (Item 6 from file: 34)
06805678   Genuine Article#: ZT706   Number of References: 34
Spin-dependent tunneling in discontinuous metal/insulator multilayers

Author: Dieny B (REPRINT) ; Sankar S; McCartney MR; Smith DJ; BayleGuillemaud P; Berkowitz AE
Corporate Source: UNIV CALIF SAN DIEGO,CTR MAGNET RECORDING RES/LA JOLLA//CA/92093 (REPRINT); CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE/F-38054 GRENOBLE//FRANCE/; UNIV CALIF SAN DIEGO,DEPT PHYS/LA JOLLA//CA/92093; ARIZONA STATE UNIV,CTR SOLID STATE SCI/TEMPE//AZ/85287; ARIZONA STATE UNIV,DEPT PHYS & ASTRON/TEMPE//AZ/85287
Journal: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS , 1998 , V 185 , N3 ( JUN ) , P 283-292
ISSN: 0304-8853   Publication date: 19980600
Publisher: ELSEVIER SCIENCE BV , PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language: English   Document Type: ARTICLE
Geographic Location: USA; FRANCE
Subfile: CC PHYS--Current Contents, Physical, Chemical & Earth Sciences
Journal Subject Category: MATERIALS SCIENCE; PHYSICS, CONDENSED MATTER
Abstract: We have studied the structural, magnetic and transport properties of (Co/SiO2) discontinuous multilayers. These multilayers consist of layers of Co particles embedded in an insulating SiO2, matrix. The current-in-plane (CIP) and current-perpendicular-to-the-plane (CPP) resistivities of the discontinuous multilayers can be tuned independently over orders of magnitude by varying the nominal thicknesses of the metallic and insulating layers. Negative magnetoresistance (MR) due to spin-dependent tunneling has been observed in both CIP and CPP geometries, At room temperature the two magnetoresistive responses are similar, differing only in magnitude. At lower temperatures, the two responses are remarkably different. The CIP-MR saturates readily following the magnetization curve whereas the CPP-MR exhibits hysteresis up to magnetic fields higher than 20 kOe. These differences suggest the nature of the magnetic domain structure in each metallic plane. These systems should permit a combination of ease in preparation with high magnetoresistance sensitivity at low fields. (C) 1998 Elsevier Science B.V. All rights reserved.
Descriptors--Author Keywords: spin-polarized tunneling ; spin electronics ; discontinuous multilayers ; metal/insulator multilayers ; Coulomb blockade
Identifiers-- KeyWord Plus(R): GRANULAR NICKEL FILMS; GIANT MAGNETORESISTANCE; FERROMAGNETIC-FILMS; MAGNETIC-PROPERTIES; JUNCTIONS; METALS; AG
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TEZUKA N, 1995, V19, P369, J MAGN SOC JPN
XIAO JQ, 1992, V68, P3749, PHYS REV LETT
YAOI T, 1992, V16, P303, J MAGN SOC JPN
ZHANG S, 1997, PREPRINT
SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/33 (Item 7 from file: 34)
06337022   Genuine Article#: YK258   Number of References: 11
The art of spin electronics

Author: Gregg J (REPRINT) ; Allen W; Viart N; Kirschman R; Sirisathitkul C; Schille JP; Gester M; Thompson S; Sparks P; DaCosta V; Ounadjela K; Skvarla M
Corporate Source: UNIV OXFORD,CLARENDON LAB, PARKS RD/OXFORD OX1 3PU//ENGLAND/ (REPRINT); UNIV YORK,DEPT PHYS/YORK YO1 5DD/N YORKSHIRE/ENGLAND/; HARVEY MUDD COLL,/CLAREMONT//CA/91711; IPCMS,GEMME/F-67037 STRASBOURG//FRANCE/; CORNELL UNIV,CORNELL NANOFABRICAT FACIL, KNIGHT LAB/ITHACA//NY/14853
Journal: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS , 1997 , V 175 , N1-2 ( NOV ) , P 1-9
ISSN: 0304-8853   Publication date: 19971100
Publisher: ELSEVIER SCIENCE BV , PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language: English   Document Type: ARTICLE
Geographic Location: ENGLAND; USA; FRANCE
Subfile: CC PHYS--Current Contents, Physical, Chemical & Earth Sciences
Journal Subject Category: MATERIALS SCIENCE; PHYSICS, CONDENSED MATTER
Abstract: A brief history is given of the nascent field of spin electronics in which the ability to differentially manipulate up-and down-spin current carriers is exploited, We discuss the impending marriage of spin-dependent effects with semiconductor technology and, in particular, the exploitation of spin-dependent transport in the semiconductors themselves. In this connection, preliminary experiments are described which explore spin transport in ion-implanted silicon. We conclude by evaluating various potential applications of the devices made possible by this exciting new development in electronic technology.
Descriptors--Author Keywords: spin electronic ; spin accumulation ; spin transistor ; SPICE ; spin diffusion length ; magnetic field sensor
Identifiers-- KeyWord Plus(R): MAGNETORESISTANCE
Research Fronts: 95-1615 002 (GIANT MAGNETORESISTANCE; MAGNETIC MULTILAYERS; INTERLAYER EXCHANGE COUPLING)
Cited References:
BRIT PATENT HIGH BET, 1996
BAIBICH MN, 1988, V61, P2472, PHYS REV LETT
BINASCH G, 1989, V39, P4824, PHYS REV B
FERT A, 1993, COMMUNICATION
FERT A, 1975, V6, P849, J PHYS F MET PHYS
FERT A, 1968, V21, P1190, PHYS REV LETT
GREGG J, 1994, P904, ELECTRON WORLD WIREL
JOHNSON M, 1993, V260, P320, SCIENCE
MONSMA DJ, 1995, V74, P5260, PHYS REV LETT
MOTT NF, 1936, V153, P699, P ROY SOC LOND A MAT
VALET T, 1993, V48, P7099, PHYS REV B
SciSearch(R) Cited Ref Sci (Dialog® File 34): (c) 2000 Inst for Sci Info. All rights reserved.


2/5/34 (Item 1 from file: 94)
04635475   JICST Accession Number: 00A0559766 File Segment: JICST-E
"New Spin Electronics" Created by Transition Metal Oxides.
TANAKA HIDEKAZU (1); KAWAI TOMOJI (1)
(1) Inst. of Sci. and Ind. Res., Osaka Univ.
Nippon Oyo Jiki Gakkaishi (Journal of the Magnetics Society of Japan) , 2000 , VOL.24,NO.6 , PAGE.1077-1085 , FIG.11, TBL.1, REF.28
Journal Number: Z0944AAE ISSN: 0285-0192
Universal Decimal Classification: 537.62:54-31 535.097/.098 621.382:537.633
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Abstract: Materials with strongly correlated electrons exhibit a rich variety of magnetic and electrical properties due to the strong interactions among localized spins, conductive electrons, and lattices. Because of this character, 3d transition metal oxides possess numerous functional properties, including ferroelectric-piezoelectric, photo-active, ferromagnetic, spin glass, and superconductive properties. The magneto-electrical properties of these metal oxides are very sensitive to their carrier concentration, electron transfer, and localized spin states. By integrating these characteristics in functionally harmonized artificial lattices, it is possible to control numerous functions through the freedom of degree of the spin, charge, and lattice. In this article, as a step toward "new spin electronics", we describe how to create novel functional magnetic oxide superlattices and heterostructures in order to apply them to sensitive and multi-functional devices that respond to a variety of external fields.
Descriptors: transition metal compound; metal oxide; magnetic material; electron correlation; exchange interaction; dielectric property; superconductivity; perovskite type crystal; electron spin; Hund's rule; giant magnetoresistance; photomagnetic effect; ferromagnet; piezoelectrics; ferroelectrics; spinel
Broader Descriptors: oxide; chalcogenide; oxygen group element compound; oxygen compound; material; electronic structure; energy level; interaction; electrical property; crystal; solid(matter); spin; law; rule; magnetoresistance effect; galvanomagnetic effect ; magnetic field effect; effect; magnetic property; magnetic substance; piezoelectric material; dielectric material; dielectrics; spinel group; oxide mineral; mineral(geology)
Classification Codes: BM06050E; BM08020L; NC03100X
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2/5/35 (Item 2 from file: 94)
04507989   JICST Accession Number: 00A0070325 File Segment: JICST-E
Transition Metal Compounds as Half-Metallic Systems.
MORITOMO YUTAKA (1)
(1) Nagoya Univ., Center for Integrated Res. in Sci. and Engineering, JPN
Nippon Oyo Jiki Gakkaishi (Journal of the Magnetics Society of Japan) , 1999 , VOL.23,NO.12 , PAGE.2103-2110 , FIG.14, TBL.1, REF.34
Journal Number: Z0944AAE ISSN: 0285-0192
Universal Decimal Classification: 537.62:54-31
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Original paper
Media Type: Printed Publication
Abstract: Spin-resolved photo-emission spectroscopy as well as the super-conducting point contact technique have revealed the half-metallic nature of perovskite manganites, La0.7Sr0.3MnO3, and CrO2. In these half-metallic compounds, only one spin channel is metallic, while the other is insulating. With these materials, new spin electronics devices that rely on the spin polarization of the carriers would be realized. In this article, we explain the synthesis, crystal structure, electronic structure, and physical properties of these half-metallic materials, and refer to the possibility of spin electronics devices. (author abst.)
Descriptors: photoelectron spectroscopy; metalloid; magnetic substance; lanthanum compound; strontium compound; manganate; metal oxide; chemical synthesis; crystal structure; electronic structure; magnetoresistance effect; tunnel effect; perovskite type crystal
Broader Descriptors: electron spectroscopy; spectroscopy; metal; metallic material; magnetic material ; material; rare earth element compound; transition metal compound; alkaline earth metal compound; oxoate; oxygen compound; oxygen group element compound; manganese compound; 7A group element compound; oxide; chalcogenide; chemical reaction; synthesis; structure; energy level; galvanomagnetic effect; magnetic field effect; effect; quantum effect; crystal; solid(matter)
Classification Codes: BM06050E
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2/5/36 (Item 3 from file: 94)
04448856   JICST Accession Number: 99A0763373 File Segment: JICST-E
Materials Science. Perspective of Spintronics.
ANDO KOJI (1)
(1) Electrotech. Lab., Agency of Ind. Sci. and Technol.
Denshi Gijutsu Sogo Kenkyujo Iho (Bulletin of the Electrotechnical Laboratory) , 1999 , VOL.63,NO.1/2 , PAGE.77-81 , FIG.3, TBL.1, REF.28
Journal Number: F0014ABN ISSN: 0366-9092
Universal Decimal Classification: 621.382
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Abstract: Spin and charge are two fundamental attributes of electrons. A new field of electronics called spintronics uses spin to control electrons to develop new functional devices such as non-volatile computer memory, highly sensitive magnetic sensors, integrated optical devices as well as logic devices which use up- and down-spins. Background and some expected applications of spintronics are discussed. (author abst.)
Descriptors: electron spin; functional device; RAM; magnetic sensor; integrated optics; logic element; electronics
Broader Descriptors: spin; memory(computer); equipment; sensor; instrumentation element; optics; physics; natural science; science; technology
Classification Codes: NC03010Z
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2/5/37 (Item 4 from file: 94)
04389886   JICST Accession Number: 00A0018174 File Segment: JICST-E
Spin electronics research report 2 1998 fiscal year ( Japan Electronic Industry Development Assoc. S).

Japan Electronic Ind. Dev. Assoc., JPN
Supin Erekutoronikusu Chosa Kenkyu Hokokusho 2. Heisei 10 Nendo , 1999 , PAGE.275P , FIG.219, TBL.7, REF.543
Journal Number: N19993139Z
Universal Decimal Classification: 621.3:681.327.1
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Descriptors: magneto-optical recording; giant magnetoresistance; spin; magnetic head; nonvolatile memory; magnetic substance; magnetic domain; perpendicular magnetic recording; magneto-optical disk; magnetic moment; fine patterning
Broader Descriptors: optical recording; recording; magnetic recording; magnetoresistance effect; galvanomagnetic effect; magnetic field effect; effect; recording head; magnetic component; parts; memory(computer); equipment; magnetic material; material; magnetic disk; information medium; optical disk; moment; working and processing
Classification Codes: NC06020F
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2/5/38 (Item 5 from file: 94)
04230812   JICST Accession Number: 99A0622312 File Segment: JICST-E
Outlook for Spin Electronics.
INOMATA KOICHIRO (1)
(1) Toshiba Corp.
Nippon Oyo Jiki Gakkaishi (Journal of the Magnetics Society of Japan) , 1999 , VOL.23,NO.7 , PAGE.1826-1833 , FIG.12, TBL.1, REF.53
Journal Number: Z0944AAE ISSN: 0285-0192
Universal Decimal Classification: 621.382 621.382.3 537.311
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Review article
Media Type: Printed Publication
Abstract: Spin electronics is expected to be a new stimulus in nanometer technologies for innovative devices. Recent studies of spin electronics are overviewed, and historical studies of spin-dependent transport and optics are described. Problems to be solved for realizing magneto-resistive random access memories(MRAMs) and spin-FET are discussed. A new spin electronic device concept is introduced, which may be realized in future by using nanometer fabrication technologies. (author abst.)
Descriptors: electron spin; giant magnetoresistance; RAM; FET; nanometer process; tunnel junction; spin flop; mesoscopic system; resonance tunnel effect
Broader Descriptors: spin; magnetoresistance effect; galvanomagnetic effect; magnetic field effect; effect; memory(computer); equipment; transistor; semiconductor device; solid state device; fine patterning; working and processing; bonding and joining; spin reorientation; magnetic transition; magnetic property; phase transition; system; tunnel effect; quantum effect
Classification Codes: NC03010Z; NC03070N; BM03010R
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2/5/39 (Item 6 from file: 94)
04141214   JICST Accession Number: 99A0409989 File Segment: JICST-E
Perspective on the Future of Semiconductor-Spin-Electronics.
YOSHIDA HIROSHI (1)
(1) Inst. of Sci. and Ind. Res., Osaka Univ.
Nippon Oyo Jiki Gakkai Kenkyukai Shiryo , 1999 , VOL.109th , PAGE.59-66 , FIG.5, REF.22
Journal Number: Z0979AAS ISSN: 1340-7562
Universal Decimal Classification: 537.62:546
Language: Japanese Country of Publication: Japan
Document Type: Conference Proceeding
Article Type: Commentary
Media Type: Printed Publication
Abstract: Based upon ab initio electronic structure calculations, we will propose a new valence control method of codoping for the fabrication of conductive p-type II-VI compound semiconductors(ZnSe, ZnO), and p-type III-V compound semiconductors(GaN, AlN), in which the valence control becomes most important for the fabrication of Mn doped semimagnetic semiconductors. We also propose a new system of semimagnetic semiconductors in chalcopyrite structure based on CuInSe2. We slso propose a new doping method to enhance the intensity of 4f intra atomic photoluminescence in InP: Er system. (author abst.)
Descriptors: magnetic semiconductor; zinc selenide; zinc oxide; gallium nitride; aluminum nitride; indium phosphide; impurity compensation; copper compound; material design; compound semiconductor; doping; manganese; erbium; acceptor; donor; electronic structure; state density; photoluminescence; APW method; ab initio method; computer simulation
Broader Descriptors: magnetic substance; magnetic material; material; semiconductor; zinc compound; 2B group element compound; transition metal compound; selenide(chalcogenide); chalcogenide; oxygen group element compound; selenium compound; metal oxide; oxide; oxygen compound; gallium compound; 3B group element compound; nitride; nitrogen compound; nitrogen group element compound; aluminum compound; indium compound; phosphide; phosphorus compound; compensation; 1B group element compound; design; 7A group element; transition metal; metallic element; element; fourth row element; lanthanide; rare earth element; energy level; density; luminescence; approximation method; computer application; utilization; simulation
Classification Codes: BM06060P
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2/5/40 (Item 7 from file: 94)
04118371   JICST Accession Number: 99A0637815 File Segment: JICST-E
Perfect Epitaxy of Perovskite Manganite Thin Film and Perovskite Superlattice.
IZUMI MAKOTO (1); KAWASAKI MASASHI (1); TOKURA YOSHINORI (1)
(1) Joint Res. Center for Atom Technol., JPN
Kotai Butsuri (Solid State Physics ) , 1999 , VOL.34,NO.7 , PAGE.609-617 , FIG.9, REF.26
Journal Number: F0158BAY ISSN: 0454-4544 CODEN: KOTBA
Universal Decimal Classification: 539.23:54-31
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Abstract: We define and demonstrate the factors of perfection of perovskite epitaxy to explore a novel field of spin-electronics based on perovskite manganite. With use of alternating stack of ferromagnetic and antiferromagnetic perovskite, we can control the magnetic and electronic properties with changing each layer thickness. (author abst.)
Descriptors: manganese compound; perovskite type crystal; thin film growth; artificial superlattice; atomic layer epitaxy; magnetic thin film; film thickness; oxide; lanthanum compound; strontium compound; strontium titanate; thickness control; RHEED; atomic force microscope; ion scattering spectroscopy
Broader Descriptors: 7A group element compound; transition metal compound; crystal; solid(matter); superlattice; crystal lattice; lattice; epitaxy; crystal growth; magnetic substance; magnetic material; material; thin film; membrane and film; thickness; length; geometric quantity; chalcogenide; oxygen group element compound; oxygen compound; rare earth element compound; alkaline earth metal compound; titanate; oxoate; titanium compound; 4A group element compound; control; high energy electron diffraction; electron diffraction; particle diffraction; diffraction; coherent scattering; scattering; reflection electron diffraction; force microscope; scanning probe microscope; microscope; spectroscopy
Classification Codes: BK14050P
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2/5/41 (Item 8 from file: 94)
03927461   JICST Accession Number: 99A0303771 File Segment: PreJICST-E
Spin-electronics: Issues and Opportunities.
ANDO KOJI (1)
(1) Electrotech. Lab., Agency of Ind. Sci. and Technol.
FED Janaru (FED Journal) , 1998 , VOL.9,NO.2 , PAGE.25-27
Journal Number: L2842AAZ ISSN: 0918-2772 CODEN: FEJAE
Language: Japanese Country of Publication: Japan
Document Type: Journal
Media Type: Printed Publication
JICST-EPlus (Dialog® File 94): (c)2000 Japan Science and Tech Corp(JST). All rights reserved.


2/5/42 (Item 9 from file: 94)
03557380   JICST Accession Number: 98A0305302 File Segment: JICST-E
Semiconductor Spin Electronics A New wave in Optoelectronics.
ONO HIDEO (1)
(1) Tohoku Univ.
Optronics , 1998 , NO.195 , PAGE.115-118 , FIG.3, REF.8
Journal Number: Y0019AAI ISSN: 0286-9659
Universal Decimal Classification: 539.124:621.315.592 621.382
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Descriptors: semiconductor; electron spin; optoelectronics; magnetic substance; conduction band; valence band; cadmium compound; manganese compound; telluride(chalcogenide)
Broader Descriptors: spin; electronics; technology; magnetic material; material; band structure; energy level; 2B group element compound; transition metal compound; 7A group element compound; chalcogenide; oxygen group element compound; tellurium compound
Classification Codes: BM02060N; NC03010Z
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2/5/43 (Item 10 from file: 94)
03242636   JICST Accession Number: 98A0032550 File Segment: PreJICST-E
Spin Electronics.
FASOL G (1)
(1) Inst. of Ind. Sci., Univ. of Tokyo
Sakigake Kenkyu 21 Kenkyu Hokokukai. Heisei 8 Nendo. Kozo to Kino Bussei Ryoiki Koen Yoshishu (PRESTO Symposia 1996fy. Structure and Functional Property Presentation Abstracts) , 1996 , PAGE.45-55
Journal Number: N19972785X
Language: Japanese Country of Publication: Japan
Document Type: Conference Proceeding
Media Type: Printed Publication
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2/5/44 (Item 11 from file: 94)
03035616   JICST Accession Number: 96A0838603 File Segment: JICST-E
Magnetic materials with high performance magnetic characteristics which support tendency toward compact size, light weight and high recording density. Spin electronics.
MAEKAWA SADAMICHI (1)
(1) Nagoya Univ., Sch. of Eng.
Kogyo Zairyo (Engineering Materials ) , 1996 , VOL.44,NO.11 , PAGE.65-67 , FIG.11, REF.7
Journal Number: F0172AAZ ISSN: 0452-2834 CODEN: KZAIA
Universal Decimal Classification: 666.5 621.318.1
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Commentary
Media Type: Printed Publication
Abstract: Spin electronics in which the spin of electron is applied is explained. Ferromagnetic tunnel junction is outlined, and it is described that tunnel magnetoresistance effect (TMR) offers high density because it gives a bigger electric resistance compared to the giant magnetoresistance effect (TMR) of metallic artifical lattice. A spin blockade which is a spin device using the above mentioned phenomena is experimentally verified, and a spin polarization field effect transistor ( Spin-FET ) is proposed.
Descriptors: porcelain; ferromagnet; electronics; electron spin; magnetic property; tunnel junction; magnetoresistance effect; spin polarization; FET; artificial lattice alloy; spin-orbit interaction
Broader Descriptors: pottery; ceramics; magnetic substance; magnetic material; material; technology; spin; bonding and joining; galvanomagnetic effect; magnetic field effect; effect ; polarization(phenomenon); polarization; transistor; semiconductor device; solid state device; alloy; metallic material; interaction
Classification Codes: YC03030G; NA04040H
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2/5/45 (Item 12 from file: 94)
02761900   JICST Accession Number: 96A0509795 File Segment: JICST-E
Current Status on the Research of Giant Magnetoresistance.
MAEKAWA SADAMICHI (1)
(1) Nagoya Univ., Sch. of Eng.
Kotai Butsuri (Solid State Physics ) , 1996 , VOL.31,NO.6 , PAGE.519-527 , FIG.16, REF.35
Journal Number: F0158BAY ISSN: 0454-4544 CODEN: KOTBA
Universal Decimal Classification: 537.311.1.01:669
Language: Japanese Country of Publication: Japan
Document Type: Journal
Article Type: Review article
Media Type: Printed Publication
Abstract: The purpose of this paper is to review progress in the research of the giant magnetoresistance in a variety of magnetic nanostructures. Some ideas for spin-electronics are also presented in connection with the giant magnetoresistance. (author abst.)
Descriptors: magnetoresistance effect; film thickness; fine patterning; nanostructure; artificial lattice alloy; magnetic substance; ferromagnetism; tunnel junction; fine particle; giant magnetoresistance
Broader Descriptors: galvanomagnetic effect; magnetic field effect; effect; thickness; length; geometric quantity; working and processing; structure; alloy; metallic material; magnetic material; material; magnetism; magnetic property; bonding and joining; particle
Classification Codes: BM03031E
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2/5/46 (Item 1 from file: 103)
04609168   EDB-00-079576
Title: Semiconductors put spin in spintronics
Author: Weiss, Dieter (University of Regensburg, Regensburg (Germany))
Source: Physics World  v 13:3 .  CODEN: PHWOEW  ISSN: 0953-8585
Publication Date: Mar 2000    p vp.
Note: Country of input: IAEA
Document Type: Journal Article
Language: English
Journal Announcement: EDB0016
Subfile:   ETD (Energy Technology Data Exchange) .   GBN (United Kingdom (sent to DOE from))
Country of Origin: United Kingdom
Country of Publication: United Kingdom
Abstract: Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany2048d also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)
Descriptors: ELECTRONS; FERROMAGNETIC MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION
Broader Terms: LEPTONS; MAGNETIC MATERIALS; MATERIALS; ANGULAR MOMENTUM; PARTICLE PROPERTIES; ORIENTATION; ELEMENTARY PARTICLES; FERMIONS
INIS Subject Categories: S75
   (
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2/5/47 (Item 2 from file: 103)
04609131   EDB-00-079539
Title: Spinning electrons could lead electronics revolution
Author: Oestreich, M.; Ruehle, W. (Philipps-University, Marburg (Germany))
Source: Physics World  v 12:3 .  CODEN: PHWOEW  ISSN: 0953-8585
Publication Date: Mar 1999    p vp.
Note: Country of input: IAEA
Document Type: Journal Article
Language: English
Journal Announcement: EDB0016
Subfile:   ETD (Energy Technology Data Exchange) .   GBN (United Kingdom (sent to DOE from))
Country of Origin: United Kingdom
Country of Publication: United Kingdom
Abstract: In 1990 Supriyo Data and Biswajit Das of Purdue University in the US proposed a new type of field-effect transistor that works by transporting the spin of electrons, rather than their charge, through a semiconductor. To make such devices work, the electrons must first be polarized, that is all their spins must be made to point in the same direction. Next this polarization must be preserved as the electrons move through the semiconductor; in other words, the number of ''spin flips'' must be negligible. A significant breakthrough in the second of these challenges was made recently when Jay Kikkawa and David Awschalom of the University of California at Santa Barbara demonstrated that ''spin transport'' can be accomplished over distances exceeding 100 microns and can last for up to 29 nanosceonds (Nature 1999 397 139). In this article the authors discuss the latest advances in spin electronics. (UK)
Descriptors: ELECTRONS; FIELD EFFECT TRANSISTORS; QUANTUM ELECTRONICS; SPIN; SPIN ORIENTATION
Broader Terms: LEPTONS; TRANSISTORS; ANGULAR MOMENTUM; PARTICLE PROPERTIES; ORIENTATION; ELEMENTARY PARTICLES; FERMIONS; SEMICONDUCTOR DEVICES
INIS Subject Categories: S71
   (
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2/5/48 (Item 3 from file: 103)
04529229   JP-99-001659; EDB-99-109908
Title: Nanostructured granular tunnel junction device
Original Title: Nano kozo guranyura tunnel setsugo soshi
Corporate Source:   Toshiba Corp., Tokyo (Japan)
Source: Toshiba Rebyu (Toshiba Review)  v 54:3 .  CODEN: TORBAN  ISSN: 0372-0462
Publication Date: 1 Mar 1999    p 30
Document Type: Journal Article
Language: Japanese
Journal Announcement: EDB9924
Availability: Toshiba Corp., 1-1, Shibaura 1-chome, Minato-ku, Tokyo, Japan
Subfile:   ETD (Energy Technology Data Exchange) .   NEDO (Japan (sent to DOE from))
US DOE Project/NonDOE Project: NP
Country of Origin: Japan
Country of Publication: Japan
Abstract: Spin electronics is now attracting attention as a technology that will lead to the creation of innovative electronic devices, and the above-named device is a fruit of efforts in this connection. The device has a layer of ferromagnetic cobalt platinum (CoPt) alloy nanometer-rule particulates sandwiched between two alumina (Al[sub 2]O[sub 3]) layers for insulation, and the laminate is then placed between two ferromagnetic electrodes positioned close thereto. The result is a double tunnel junction structure, which exhibits a tunnel magnetic resistance of not less than 20% in a weak 20 Oe magnetic field. The layer of particulates stores information, and the junction resistance is lower than that of a conventional tunnel junction by three orders of magnitude. These justify a hope that the newly developed device will find its use in non-volatile magnetic random access memory (MRAM) devices, for instance, which operate at a very high speed. (translated by NEDO)
Descriptors: ALUMINIUM OXIDES; FERROMAGNETIC MATERIALS; GRANULAR MATERIALS; JUNCTION DIODES; MICROELECTRONICS; MICROSTRUCTURE; SPIN; TUNNEL DIODES
Broader Terms: ALUMINIUM COMPOUNDS; ANGULAR MOMENTUM; CHALCOGENIDES; MAGNETIC MATERIALS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Subject Categories: 426000* -- Engineering -- Components, Electron Devices & Circuits -- (1990-)
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