OTHER THIN-FILM LUMINESCENCE MATERIALS

At Rosich and Company, Moscow, advanced screens are grown through an epitaxial process to prepare ZnSe on GaAs substrates. These screens reportedly have many layers, and have been produced on 15 cm2 substrates. Temperature-independent operation in the deep blue was achieved after process development. Up to 2.5 W was obtained at an efficiency of 3-4% at 40 degrees centigrade. The claim was made that these epitaxial screens should be able to achieve a 1,000-hr lifetime at room temperature.

At L'viv State University, Ukraine, Professor Yo. M. Stakhira investigates the effect of electron beams on semiconductor films (e.g., GaSe). The electron beam creates a junction between different layers of the structure and causes a 2-D to 3-D structural transition. The structural transition results in changes of the film's optical parameters (i.e., refractive index). The effect may be applicable in large screen manufacturing.

The Department of Computer Technology at the Institute of Fine Mechanics and Optics, St. Petersburg, in conjunction with other scientific research and industrial organizations, has developed computer codes for modeling and optimizing chemical vapor deposition processes. These codes have been specifically developed to model MCVD for optical fibers, CVD for selenide and zinc sulfide, MOCVD for cadmium telluride, and MOCVD and PE-MOCVD for high-Tc superconductive thin films.


Published: December 1994; WTEC Hyper-Librarian