Site: Giricond Research and Development Institute
10 Kurchatov Street
St. Petersburg 194223
Russian Federation

Date Visited: October 28, 1993

Report Author: E.C. Urban



J. Larimer
E.C. Urban


Sergei Tairov

Chief of Department

Valerii Marachonov

Head of Optoelectronics; Semicond. Devices Lab.

Dr. Alexander L. Zakgeim

Senior Researcher

Dr. Grygorii Simin

Senior Scientist


The Giricond Research and Development Institute was in the past a part of a much larger company called Positron. Giricond was the state institute with principal responsibility for the field of capacitors, resistors, sensors, and hybrid integrated circuits (HIC) research and development. Nearly twenty plants in the FSU produced the components derived by Giricond. Positron has now split into individual entities, one of which is Giricond.

The Microelectronics Division consists of four branches: Hybrid Integrated Circuits (both thick and thin films), Sensors (optoelectronic), Si devices (diodes), and III-V devices. This division has had strong historical relationships with Ioffe Physico-Technical Institute. It has had very limited contacts with foreign firms.


Discussions at Giricond focused on products made in the III-V devices branch, which makes optoelectronic devices, discrete devices, high-temperature FETs, thyristors, and integrated circuits for optoelectronic and high-temperature applications. Devices are developed from GaAs, Ga:AlAs, and GaP. Optoelectronics work began around 1969 from technology developments at Ioffe. Most of Giricond's work is involved with building diodes and diode arrays. Diode arrays are used for optically pumping solid-state lasers. Giricond's researchers also described a GaAs device for commutation applications that switches at 100 psec. They claim to have high efficiency, narrow spectral distribution LEDs for use in transmitters and receivers. These are used for television remote control devices, indicators, and alarm systems, and for taking measurements during machining applications. They are experimenting with MESFETs combined with lasers. Typical diode device specifications shown to the WTEC panel members were:

Part No. AL 147A, AL 147A(T) Ga:AlAs Ultra-High Power IR-Emitting Diodes

Part No. ALS 134 A-2 Ga:AlAs Ultra-High Power IR-Emitting Source

Part No. 3L 146 AS Ga:AlAs High Power IR-Emitting Source With Narrow Beam


Giricond claims to be able to make diodes and diode arrays in large quantities. However, Giricond's scientists stated that they have packaging problems. The WTEC panel did not see any manufacturing capability. There was no display development taking place at Giricond.

Published: December 1994; WTEC Hyper-Librarian